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本文着重研究了Cd在InP和InGaAsP中的低温(550～570℃)扩散。扩散源是由CdP:和Cd、P组成。采用这种方法对InP和InGaAsP进行Cd扩散,载流子浓度N≥10_(18)cm~(-3)。通过调整扩散源中的P量可以控制扩散深度。并能形成一个陡的扩散浅前沿(shallow front)。从实验上获得了结深X与扩散温度T(包括T_0)和扩散时间t的依赖关系;表面浓度Cs-1/T的关系;以及扩散层中的纵向载流子分布。另外,还讨论了温度梯度(TGI)对扩散深度X的影响以及扩散过程中出现的异常现家。
This paper focuses on the low temperature (550 ~ 570 ℃) diffusion of Cd in InP and InGaAsP. Diffusion sources are composed of CdP: and Cd, P. The Cd diffusion of InP and InGaAsP was carried out by this method. The carrier concentration was N10_ (18) cm ~ (-3). The diffusion depth can be controlled by adjusting the amount of P in the diffusion source. And can form a shallow shallow shallow front. The dependence of the junction depth X on the diffusion temperature T (including T_0) and the diffusion time t is experimentally obtained. The relationship between the surface concentration Cs-1 / T and the longitudinal carrier distribution in the diffusion layer is obtained. In addition, the influence of temperature gradient (TGI) on diffusion depth X and the anomaly existing during diffusion are also discussed.