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微波晶体管是六十年代中期发展起来的新型微波半导体器件之一。它包括双极晶体管和场效应晶体管两种类型。微波双极晶体管主要用在5千兆赫以下的频段,而砷化镓场效应晶体管的工作频率已经超过18千兆赫。微波晶体管放大器与其它微波放大器(行波管放大器、参量放大器和隧道二极管放大器)相比较,具有频带宽、相位特性的线性度好、噪声系数小、动态范围大、工作稳定性好、便于级联获得高增益、电路简单、体积小、重量轻等优点。因此,它完全取代了行波管放大器、隧道二极管放大器在接收机前端中的地位,在某些情况下还能取代参量放大器。现时,微波晶体管
Microwave transistors are one of the new microwave semiconductor devices developed in the mid-1960s. It includes bipolar transistors and field effect transistors of two types. Microwave bipolar transistors are mainly used in the frequency band below 5 gigahertz, while gallium arsenide field effect transistors have a frequency of over 18 gigahertz. Compared with other microwave amplifiers (TWT, parametric amplifier and tunnel diode amplifier), the microwave transistor amplifier has the advantages of good linearity of frequency bandwidth and phase characteristics, small noise figure, large dynamic range, good working stability and easy cascading Gain high gain, simple circuit, small size, light weight and other advantages. As a result, it completely suppresses the presence of a traveling wave tube amplifier, a tunnel diode amplifier in the receiver front end and, in some cases, a parametric amplifier. At present, microwave transistors