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比较了增强型埋沟ｐＭＯＳＦＥＴ和增强型表面沟道ｐＭＯＳＦＥＴ的导通机理，提出了一种处理沟道反型注入非均匀掺杂浓度的方法，推导了增强型埋沟ｐＭＯＳＦＥＴ阈值电压的计算公式，比较了增强型埋沟ｐＭＯＳＦＥＴ阈值电压的计算值和测量值，计算值和测量值的相对偏差＜１０％，表明文中提出的有关方法和模型是有一定精度的。计算结果也表明掺杂浓度和结深是影响阈值电压的两个主要参数。
The conduction mechanism of the enhanced buried-channel pMOSFET and the enhanced surface-channel pMOSFET is compared. A method of processing the non-uniform doping concentration of the channel inversion implant is proposed, and the formula for calculating the threshold voltage of the enhanced buried-channel pMOSFET is deduced. The calculated and measured values of the threshold voltage of the buried buried pMOSFET are compared. The relative deviation between the calculated and measured values is less than 10%, which indicates that the proposed method and model have certain accuracy. The calculation results also show that the doping concentration and junction depth are the two main parameters that affect the threshold voltage.