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发现在氢氧化钾(KOH)溶液中锑化铟阳极氧化的速度与半导体的掺杂浓度有关系。氧化处理法为显示锑化铟以及砷和磷这种材料的结提供了一种手段。阳极化图案与用以制作结的扩散杂质分布有密切的关系。详细地研究了锑化铟的锌扩散结和镉扩散结,发现镉扩散结相当均匀,电特性也较好,原因似乎在于半导体本身,包括与扩散的锌起反应的残余杂质。对选择用氧化层防止扩散的掩模的一些试验作了说明,发现对镉的掩蔽作用较为有效。
It has been found that the rate of indium antimonide anodization in potassium hydroxide (KOH) solution is related to the doping concentration of the semiconductor. Oxidation methods provide a means of displaying indium antimonide and the junction of such materials as arsenic and phosphorus. The anodization pattern is closely related to the distribution of diffusion impurities used to make the junction. The zinc diffusion junction and the cadmium diffusion junction of indium antimonide were studied in detail. It was found that the diffusion junction of cadmium was fairly uniform and the electric characteristics were also good, because of the semiconductors themselves, including the residual impurities which react with the diffused zinc. Some experiments on selecting a mask that prevents diffusion with an oxide layer are described and it is found that the masking effect on cadmium is more effective.