用含Ｚｎ的固态杂质源，在化合物半导体ＧａＡｓ基片上进行了连续波（ＣＷ）１０．６μｍ激光诱导扩散，做出了Ｐ－Ｎ结。分别利用扫描电子显微镜和二次离子质谱仪对扩散样品进行扩散区形貌分析和杂质分布研究，给出了结深ｘｊ、杂质浓度分布Ｃ（ｘ，ｔ，Ｔ）等性能参数和扩散时间ｔ、温度Ｔ等工艺参数之间的关系，获得了亚微米的扩散结结深及１０２０ｃｍ－３量级的表面掺杂浓度 Continuous solid-state (CW) 10.6μm laser-induced diffusion was performed on a compound semiconductor GaAs substrate using a solid-state impurity source containing Zn, resulting in a P-N junction. The morphologies and impurity distributions of diffusion samples were studied by scanning electron microscopy (SEM) and secondary ion mass spectrometer (MICA) respectively. The performance parameters such as junction depth xj, impurity concentration distribution C (x, t, T) and diffusion time t were given. Temperature T and other process parameters to obtain the sub-micron diffusion junction depth and 1020 cm-3 surface doping concentration