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首先对分布式放大器中L型和T型网络的频率特性进行了研究.分析表明,L型网络比T型网络在设计中具有更好的频率特性.基于稳懋半导体的2-μm GaAs HBT工艺实现了一种L型网络的分布式放大器.测试结果表明,在3～18GHz频率范围内其增益为5.5dB,增益平坦度为±1dB,体现了很好的带宽性能.此外,在设计的频率范围内反射损耗S11,S22均低于-10dB.在5GHz时的1dB压缩点处输出功率为13.3dBm.芯片面积为0.95mm2,在3.5V电源下功耗为95mW.
Firstly, the frequency characteristics of L-type and T-type networks in distributed amplifiers are studied, and the analysis shows that L-type networks have better frequency characteristics than T-type networks.The 2-μm GaAs HBT process based on Winbond A distributed L-type network amplifier is achieved.The test results show that the gain is 5.5dB and the gain flatness is ± 1dB in the frequency range of 3 ~ 18GHz, which shows the good bandwidth performance.In addition, The range of S11 and S22 is less than -10dB, and the output power is 13.3dBm at 1GHz compression point at 5GHz.The chip area is 0.95mm2, and the power consumption is 95mW at 3.5V power supply.