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在（１００）硅单晶衬底上，７５０℃外延生长了立方晶系（１００）晶向的ＳｉＣ薄膜，该生长温度是目前所报道的最低生长温度。采用一种简单的硅碳比为１：１的甲基硅烷（ＳｉＣＨ３Ｈ３）源材料和Ｈ２，用低压化学汽相沉积工艺生长了ＳｉＣ薄膜。用透射电子显微镜（ＴＥＭ）、单晶和双晶ｘ射线衍射仪、红外吸收、椭球仪、厚度测量、四探针测量以及其它方法表征了生长的薄膜。ｘ射线测量结果表明，我们生长的薄膜结晶学质量与类似厚度的商用ＳｉＣ薄膜的质量相当。介绍了本研究中所用的新的生长装置和ＳｉＣ薄膜的性质。
On the (100) silicon single crystal substrate, a cubic (100) crystal orientation SiC film is epitaxially grown at 750 ° C, which is the lowest reported growth temperature. SiC thin film was grown by low pressure chemical vapor deposition (CVD) using a simple SiH3H3 source material and H2 with a Si / C ratio of 1: 1. The grown films were characterized by transmission electron microscopy (TEM), single crystal and twin crystal x-ray diffractometry, infrared absorption, ellipsoid, thickness measurement, four probe measurements, and other methods. X-ray measurements show that the crystalline quality of the films we grow is comparable to the quality of commercial SiC films of similar thickness. The properties of new growth devices and SiC films used in this study are presented.