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基于磁性合金的等离子体刻蚀工艺,在中国科学院微电子研究所自主研发的刻蚀设备中,使用Ar,CO和NH3的混合气体对用于形成磁随机存储器(MRAM)的多种磁性金属叠层进行刻蚀。采用两步刻蚀的方法刻蚀了多层磁性金属叠层,每一步的刻蚀气体组分不同,研究了Ar气在混合气体中的体积分数对材料刻蚀速率和侧壁形貌的影响。结果表明,刻蚀速率随着Ar气体积分数的增加而增加,而侧壁倾角则随着Ar气体积分数的增加而减小。两步刻蚀的方法可以根据材料的结构特点来控制Ar离子轰击的作用,可以得到大于21.4 nm/min的刻蚀速率和约90°的侧壁倾角。
Based on the plasma etching process of the magnetic alloy, a mixed gas of Ar, CO and NH3 is used in an etching device researched and developed independently by the Institute of Microelectronics, Chinese Academy of Sciences for a plurality of magnetic metal stacks for forming a magnetic random access memory (MRAM) Layer for etching. The multi-layer magnetic metal stacks were etched by two-step etching. The composition of etching gas in each step was different. The influence of the volume fraction of Ar gas in the mixed gas on the etching rate and sidewall morphology of the material . The results show that the etching rate increases with the increase of Ar gas volume fraction while the dip of sidewall decreases with the increase of Ar gas volume fraction. The two-step etching method can control the effect of Ar ion bombardment according to the structural characteristics of the material, and can obtain an etching rate greater than 21.4 nm / min and a sidewall tilt angle of about 90 °.