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用新的催化ＣＶＤ法在约３５０℃的低温条件下研制出了ａ－Ｓｉ薄膜。本方法是利用催化剂，使ＳｉＨ４和Ｈ２混合气体在一定温度下反应而裂解，在衬底上沉积ａ－Ｓｉ薄膜。所制出的ａ－Ｓｉ薄膜具有良好的光电特性，光电灵敏度超过１０６，电子自旋密度约２．５×１０１６ｃｍ－３。
A new thin film of a-Si was developed by a new catalytic CVD method at a low temperature of about 350 ℃. In the method, a-Si film is deposited on the substrate by using a catalyst to make the mixed gas of SiH4 and H2 react at a certain temperature to be cracked. The prepared a-Si film has good photoelectric properties, photoelectric sensitivity over 106, electron spin density of about 2.5 × 1016cm-3.