据《日经工卜夕卜o。夕X》1997年第2—10期报道，德国西门子与德国Ruhr大学、奥地利工业大学合作，采用SiGe技术开发了高速2：1分频器IC，工作频率为42GHz。Si／SiGeHBT采用双层多晶硅自匹配制造技术，该器件的截止频率为68GHz，发射区尺寸为0．2μm×2．7μm。为了提高该器件 According to “Nikkei Bu Bu Bu o. Xi X ”1997 No. 2-10 reported that Germany’s Siemens and Ruhr University in Germany, the Austrian University of Technology, the use of SiGe technology developed high-speed 2: 1 divider IC, the operating frequency of 42GHz. Si / SiGeHBT uses double-layer polysilicon self-matching manufacturing technology, the device’s cut-off frequency of 68GHz, the emission area size of 0.2μm × 2.7μm. In order to improve the device