论文部分内容阅读
CMOS工艺技术不断地用于频率越来越高的器件结构,最新报导的一个器件是美国加尼福尼亚理工学院开发的令人印象深刻的24GHz功率放大器,在大于3GHz带宽内,其输出功率达到145dBm。该CMOS功放包括50Ω的片上输入、输出阻抗匹配。匹配网络基于采用屏蔽衬底共面波导(CPW)结构。采用这
CMOS technology continues to be used for higher and higher frequency device structures, the latest report of a device is the United States California Institute of Technology developed an impressive 24GHz power amplifier in more than 3GHz bandwidth, the output power Reached 145dBm. The CMOS amplifier includes 50Ω on-chip input and output impedance matching. The matching network is based on a shielded substrate coplanar waveguide (CPW) structure. Adopt this