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本文以发射极电流集边效应理论的精确解为出发点,通过计算有效发射区宽度Seff,提出了射频功率晶体管发射极宽度的设计方法。作为应用实例,给出了工作频率分别为30MHz、108MHz、44MHz和1000MHz四个系列产品的发射极宽度优化设计的典型数据。
In this paper, the exact solution of the emitter-current-collector effect theory is taken as the starting point. By calculating the effective emission area width Seff, a design method of RF power transistor emitter width is proposed. As an application example, typical data of optimized emitter width design for four series of products with operating frequency of 30MHz, 108MHz, 44MHz and 1000MHz respectively are given.