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本文介绍了一种薄膜基底与镁源蒸发放置在不同温区的混合物理化学气相法(HPCVD)制备MgB2超导薄膜的技术.以B2H6为硼源,在(0001)取向的Al2O3单晶基底上在不同的基底温度下制备了MgB2超导薄膜.采用扫描电子显微镜(SEM)、X射线衍射(XRD)和标准四线法电阻测量分析了基底沉积温度对生成的MgB2薄膜的表面形貌、晶体结构、超导转变温度的影响.结果表明,随着基底温度的升高,MgB2相结晶程度提高,C轴取向程度增强、薄膜整体性能显著提高.基底温度为853K时制备的MgB2薄膜的超导电性最为优异:其超导起始转变温度高达39.85K,ΔT为0.32K.
In this paper, a technique for preparing MgB2 superconducting thin films by a hybrid physical-chemical vapor deposition (HPCVD) method with thin film substrate and Mg source evaporation in different temperature regions was studied. The B2H6 was used as a boron source on (0001) oriented Al2O3 single crystal substrate MgB2 superconducting films were prepared at different substrate temperatures.The surface morphologies and crystal structures of MgB2 films were analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD) and standard four-wire method. , Superconducting transition temperature.The results show that with the increase of the substrate temperature, the degree of crystallinity of the MgB2 phase increases and the degree of C-axis orientation increases, the overall performance of the film is significantly enhanced.The superconductivity of the MgB2 films prepared at a substrate temperature of 853K The most excellent: the transition temperature of its superconducting up to 39.85K, ΔT 0.32K.