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本文对用准泡发射区基区工艺制备的ＳｉＧｅ异质结双极晶体管进行了微波功率性能的研究．ＳｉＧｅＨＢＴ在偏置电压ＶＣＥ＝４Ｖ和偏置电流Ｉｃ＝３００ｍＡ时截止频率ｆＴ＝７．５ＧＨｚ．在共射结构Ｃ类工作状态下，ＳｉＧｅ异质结双极晶体管工作在９００ＭＨｚ时，连续波输出功率为５Ｗ，集电极转化效率为６３％，功率增益为７．４ｄＢ．
In this paper, the microwave power performance of SiGe HBTs fabricated by the base region of the quasi-bubble emitter was studied. The SiGe HBT has a cutoff frequency of fT = 7.5 GHz at a bias voltage of VCE = 4 V and a bias current of Ic = 300 mA. In the C-type working state of the co-emitter structure, the output power of continuous wave is 5W when the SiGe Heterojunction Bipolar Transistor operates at 900MHz, the collector conversion efficiency is 63% and the power gain is 7.4dB.