论文部分内容阅读
制作了蓝宝石衬底上生长的AlGaN/GaN高电子迁移率晶体管.0V栅压下,0·3μm栅长、100μm栅宽的器件的饱和漏电流密度为0·85A/mm,峰值跨导为225mS/mm;特征频率和最高振荡频率分别为45和100GHz;4GHz频率下输出功率密度和增益分别为1·8W/mm和9·5dB,8GHz频率下输出功率密度和增益分别为1·12W/mm和11·5dB.
AlGaN / GaN high electron mobility transistor grown on sapphire substrate was fabricated.The saturation leakage current density of device with 0.3μm gate length and 100μm gate width at 0V gate voltage was 0.85A / mm and the peak transconductance was 225mS / mm; the characteristic frequency and the maximum oscillation frequency are 45 and 100 GHz respectively; the output power density and gain at 4 GHz are respectively 1.8 W / mm and 9.5 dB, and the output power density and gain at 8 GHz are respectively 1.12 W / mm And 11.5dB.