论文部分内容阅读
报道了用低压金属有机化学汽相淀积（ＬＰ－ＭＯＣＶＤ）技术在（１００）ＩｎＰ衬底上生长ＩｎＧａＡｓＰ体材料及ＩｎＧａＡｓＰ（１．３μｍ）／ＩｎＧａＡｓＰ（１．６μｍ）量子阱结构的生长条件和实验结果。比较了５５０℃和５８０℃两个生长温度下Ｉｎ１－ｘＧａｘＡｓｙＰ１－ｙ体材料及相应量子阱结构的特性，表明在５８０℃生长条件下，晶体具有更好的质量和特性。
The growth conditions of InGaAsP bulk materials and InGaAsP (1.3μm) / InGaAsP (1.6μm) quantum well structures grown on (100) InP substrate by low pressure metalorganic chemical vapor deposition (LP-MOCVD) Experimental results. The characteristics of the In1-xGaxAsyP1-y bulk material and the corresponding quantum well structure at 550 ° C and 580 ° C are compared, indicating that the crystals have better quality and characteristics at 580 ° C growth.