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本文探讨了Ⅳ族代位式杂质在硅、锗单晶中的晶格动力学问题.引用“局域有效电荷模型”得到三个主要模型参量,结合W.Weber的“绝热键电荷模型”所得到的硅、锗单晶的声子态密度数据,分别计算了Ⅳ族代位杂质在硅、锗单晶中所产生的局域模及带内模频率和红外吸收系数.理论计算结果与已有实验结果符合较好,同时予示了一些目前实验尚未测得的结果,进一步证明所提出模型的合理性.
In this paper, we investigate the lattice dynamics of IV-type substitutional impurities in silicon and germanium single crystal.With the reference of “local effective charge model”, we get three main model parameters, combined with W.Weber’s adiabatic bond charge model We obtained the local mode, the mode frequency and the infrared absorption coefficient of the IV substituting impurity in the Si and Ge single crystal by calculating the phonon state density data of the Si and Ge single crystals respectively. The experimental results are in good agreement with the results of some experiments that have not been tested yet, which further proves the rationality of the proposed model.