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采用竖式布里奇曼法生长了若干优质的ф２０×８０ｍｍＡｓＧａＳｅ２单晶体。经过Ａｇ２Ｓｅ共存下退火的样品，其通光波段透过率几乎都达到反射极限。计算了Ⅰ型和Ⅱ型红外倍频器的角度调谐特性曲线，利用上述晶体制备了１０．６μｍ辐射的Ⅰ型相位匹配倍频器。在一台ＴＥＡＣＯ２激光器的１０．６μｍ信频实验中测得相位匹配角为５６．１°，接收角参数△θ·Ｌ为１．０４°·ｃｍ。
A number of high-quality ф20 × 80mmAsGaSe2 single crystals were grown by vertical Bridgman method. After annealing in the presence of Ag2Se, the transmittance of the passband reaches almost the reflection limit. The angle tuning characteristics of Type I and Type II IR multipliers were calculated. Type I phase matching multipliers with 10.6 μm radiation were prepared using the above crystal. The phase matching angle was 56.1 ° and the acceptance angle parameter Δθ · L was 1.04 ° · cm measured at 10.6μm in a TEACO2 laser.