以Ar+SiH_4作为反应气体,用电子回旋共振等离子体化学气相沉积(ECR PECVD)方法制备微晶硅薄膜,研究了微波功率对薄膜中H含量、薄膜的沉积速率、择优取向和结晶度的影响。结果表明,在300℃制备低温微晶硅薄膜,随着微波功率的增大,薄膜的沉积速率先增大后减小,微波功率为600 W时达到最大;而结晶度和薄膜中的H含量则分别呈现单调增大和单调减少的趋势;使用不同的微波功率,薄膜的择优取向均为(111)方向。 The microcrystalline silicon thin films were prepared by electron cyclotron resonance plasma chemical vapor deposition (ECR PECVD) using Ar + SiH 4 as reaction gas, and the effects of microwave power on the content of H, deposition rate, preferred orientation and crystallinity of the films were investigated. . The results show that the deposition rate of microcrystalline silicon films increases at first and then decreases with the increase of microwave power at 300 ℃, and reaches the maximum at the microwave power of 600 W. The crystallinity and H content Respectively, showing a trend of monotonous increase and monotonous decrease; using different microwave powers, the preferred orientation of the film is in the (111) direction.