论文部分内容阅读
叙述了ＳｉＧｅ／Ｓｉ异质结双极晶体管（ＨＢＴ）的设计考虑，双台面结构的制作方法，并制作出ｆ_Ｔ为９ＧＨｚ的ＳｉＧｅ／ＳｉＨＢＴ。同时根据对不同尺寸ＨＢＴ的测试结果得到分布参数是影响ｆ_Ｔ的重要因素之一。
The design considerations of SiGe / Si Heterojunction Bipolar Transistor (HBT), the fabrication method of double mesa structure, and the fabrication of SiGe / SiHBT with f_T of 9GHz are described. At the same time, according to the different sizes of HBT test results obtained distribution parameters is one of the important factors affecting f_T.