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提出了空穴注入控制型横向绝缘栅双极晶体管（ Ｃ Ｉ Ｌ Ｉ Ｇ Ｂ Ｔ），它可以有效地控制高压下阳极区空穴注入，提高器件的闭锁电压。通过对阳极区反偏 ｐ＋ ｎ＋ 结击穿电压 Ｂ Ｖ Ｚ、取样电阻 Ｒ Ａ 和阳极区结深的优化，提高了 Ｃ Ｉ Ｌ Ｉ Ｇ Ｂ Ｔ 的抗闭锁能力，降低了其导通压降，并获得了初步实验结果。
A hole injection controlled lateral insulated gate bipolar transistor (CILGL) is proposed, which can effectively control hole injection in the anode region under high voltage and increase the blocking voltage of the device. The anti-blocking capability of C IL I G B T is improved by lowering the p + n + junction breakdown voltage of the anode region B V Z, sampling resistor R A and the junction area of the anode region, reducing the turn-on voltage drop , And obtained preliminary experimental results.