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在硬质合金衬底上直接沉积金刚石薄膜．总是伴随着石墨化过程．钴是促进石墨生长的积极因素。由于衬底温度决定氢原子的活性和钴的扩散方式．因而它是金刚石形核和生长的关键条件。在合适的衬底温度下，金刚石能形成均匀连续的薄膜。
Direct deposition of diamond films on cemented carbide substrates. Always accompanied by the graphitization process. Cobalt is a positive factor for graphite growth. Since the substrate temperature determines the activity of hydrogen atoms and cobalt diffusion. It is therefore a key condition for diamond nucleation and growth. At a suitable substrate temperature, diamond can form a uniform and continuous film.