本文简要介绍在对扩散杂质分布作了近似之后（在发射区和基区漂移场加速区中近似为 指数型分布，而发射结区和基区漂移场减速区中近似为线性分布），计算了双扩散晶体管的基 区输运系数、基区渡越时间和注射效率．在讨论中着重指出，为了减小基区渡越时间以提高频 率性能，应该如何全面考虑． In this paper, we briefly describe the distribution of diffusional impurities (approximate exponential distribution in the accelerating region of the drift region of the emitter region and the base region, and the approximate linear distribution in the deceleration region of the emitter junction region and the base drift region) The basal zone transport coefficient of double diffused transistor, base transit time and injection efficiency. During the discussion, it was stressed that in order to reduce the base transit time to improve the frequency performance, how to fully consider.