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为降低微通道板（ＭＣＰ）的噪声，提高二代像增强器的产品成品率，该文利用Ｘ光电子能谱（ＸＰＳ）对二代倒像管和近贴管的ＭＣＰ电极表面进行组份分析。实验发现用氩离子（Ａｒ＋）溅射３ｍｉｎ后，在近贴管的ＭＣＰ电极表面检测不到碱金属元素钾（Ｋ）、钠（Ｎａ），而在倒像管ＭＣＰ电极表面Ｋ的含量为２．１６％，Ｎａ的含量为５．６４％，且在ＭＣＰ电极表面发现铅（Ｐｂ）原子谱峰。实验分析认为，ＭＣＰ电极表面吸附的碱金属Ｋ，Ｎａ与从ＭＣＰ体内偏析于表面的Ｐｂ是二代像增强器背景噪声的主要来源之一。
In order to reduce the noise of the microchannel plate (MCP) and improve the product yield of the second generation image intensifier, the composition of the MCP electrode surface of the second generation reverse tube and the near tube was analyzed by X-ray photoelectron spectroscopy (XPS) . It was found that the alkali metal elements potassium (K) and sodium (Na) were not detected on the surface of the MCP tube near the tube after 3min of argon ion (Ar +) sputtering. The content of K on the surface of the inverted tube MCP electrode was 2 .16%, Na content is 5.64%, and lead (Pb) atomic peak is found on the surface of MCP electrode. Experimental analysis shows that the adsorption of alkali metal K and Na on the surface of MCP electrode and Pb segregated from the surface of MCP are two main sources of intensifier background noise.