美国贝尔研究所用该公司研制的 x 射线曝光装置、x 射线用掩模和可用干法显影的新的光致抗蚀剂制成了门延迟时间为40ps 的环型振荡器。该振荡器的基本器件是有效沟长为0.3μm 的 MOSFET。采用比例缩小的 FET,栅氧化膜厚23nm,结深为0.25μm,沟道掺杂为7×10~(16)cm~(-3),衬底掺杂为8×10~(15)cm~(-3),电源电压为1.5V。每门功耗为0.1mW,门传输 The Bell Laboratories of the United States made a ring oscillator with a gate delay of 40 ps using the company's x-ray exposure device, x-ray mask, and a new photoresist that can be dry-developed. The basic device of this oscillator is a MOSFET with an effective trench length of 0.3μm. Using a scaled-down FET, the gate oxide film has a thickness of 23 nm, a junction depth of 0.25 μm, a channel doping of 7 × 10 16 cm -3, a substrate doping of 8 × 10 15 cm ~ (-3), the power supply voltage is 1.5V. Each power consumption is 0.1mW, gate transmission