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70年代半导体超晶格、量子阱的出现,使人们能自由剪裁半导体材料的光电性能,开辟了人工材料的新纪元,从而对信息技术领域产生了巨大的影响。锗硅材料就是近几年发展起来的新型材料,其独特光电性能显示出重要的应用前景。迄今,Ge_xSi_(1-x)/Si异质结构、量子阱、超晶格结构的生长和材料物理研究以及应用研究发展十分迅速。利用Ge_xSi_(1-x)材料中电子的高迁移率,可研制成截止频率高达几十GHz甚至数百GHz的异质结双极晶体管(HBT);利用Ge_xSi_(1-x)/
In the 1970s, the emergence of superlattices and quantum wells enabled people to freely tailor the optoelectronic properties of semiconductor materials and opened up a new era of artificial materials, thus exerting a tremendous influence on the field of information technology. Germanium silicon material is a new material developed in recent years, its unique optical properties show an important application prospects. Up to now, the research of Ge_xSi_ (1-x) / Si heterostructure, quantum well, superlattice structure and material physics research and applied research have developed rapidly. With the high mobility of electrons in Ge_xSi_ (1-x) materials, heterojunction bipolar transistors (HBTs) with cut-off frequencies up to tens of GHz and even hundreds of GHz can be developed. By using Ge_xSi_ (1-x)