本文简要叙述用离子注入法制造双极硅ECL集成电路的实验结果。电阻器和晶体管基区的掺杂由注入硼来实现,发射区的掺杂则靠注入磷来完成。样品电路的门平均延时的典型值为2ns。文中着重介绍了注入离子能量、剂量、退火温度及时间对电路元件电学性能的影响。 This article briefly describes the experimental results of the bipolar silicon ECL integrated circuit fabricated by ion implantation. Doping of the base region of the resistor and the transistor is realized by implanting boron, and the doping of the emitter region is accomplished by implanting phosphorous. The average delay of the sample circuit gate is typically 2ns. The article focuses on the implanted ion energy, dose, annealing temperature and time on the electrical properties of circuit components.