Hole effective mass in strained Si （111）

来源 :中国科学：物理学、力学、天文学英文版 | 被引量 : 0次 | 上传用户：ailynn

【摘要】

：

The directional, averaged, and density-of-states effective masses of holes have been calculated for strained Si/(111)Si1-xGex. The results for the directional e

【作者】

：

HU HuiYon ZHANG HeMing SONG Ji

【机构】

：

KeyLaboratoryofWideBand-GapSemiconductorMaterialsandDevices

【出处】

：

中国科学：物理学、力学、天文学英文版

【发表日期】

：

2011年3期

【关键词】

：

有效质量应变效应硅(111) 空穴表面能量传统观念单调减少密度 strained Si hole effective mass

【基金项目】

：

This work was supported by the National Ministries and Commissions （Grant Nos. 51308040203 and 6139801）, the Fundamental Research Funds for the Central Universities （Grant Nos. 72105499 and 72104089）

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The directional, averaged, and density-of-states effective masses of holes have been calculated for strained Si/(111)Si1-xGex. The results for the directional effective mass show that the effect of strain makes the constant energy surface of 'heavy

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Hole effective mass in strained Si （111）

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