研究了温度从１００～４２３Ｋ范围内在薄氮氧化硅膜和薄二氧化硅膜中的高场电子陷阱的温度依赖性。我们发现；在研究的温度范围内，当温度降低时，薄氮氧化硅膜中的有效高场电子陷饼表面浓度增加，相反，在薄二氧化硅膜中的有效高场电子陷阱表面浓度减少；对于二氧化硅膜，有效的高场电子陷阶能级集中在一个非常窄的能量范围，它的产生率是１．２８３×１０１１／ｃｍ２，激活能是０．１９２ｅＶ。根据实验结果，提出了一个在二氧化硅中的高场电子陷阱的产生模型。 The temperature dependence of high-field electron traps in thin silicon oxynitride films and thin silicon dioxide films at temperatures ranging from 100 to 423K was investigated. We find that at the studied temperature range, the effective surface field electron trap concentration in the thin silicon oxynitride film increases as the temperature decreases, whereas the effective high field electron trap surface concentration in the thin silicon dioxide film decreases For the silicon dioxide film, the effective high-field electron trapping energy level is concentrated in a very narrow energy range with a rate of 1.283 × 1011 / cm2 and an activation energy of 0.192eV. Based on the experimental results, a high-field electron trap generation model in silicon dioxide is proposed.